| PART |
Description |
Maker |
| NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704 |
Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.
|
NTE[NTE Electronics]
|
| NTE5825 NTE5818 NTE5819 NTE5823 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
|
NTE[NTE Electronics]
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
| FR014H5JZ |
High-Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression
|
Fairchild Semiconductor
|
| NTE5319 |
Single phase bridge rectifier, 4A. Maximum recurrent peak reverse voltage, Prv = 600V.
|
NTE Electronics
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| CN-0187 ADL5502 ADP121 |
Crest Factor, Peak, and RMS RF Power Measurement Circuit Optimized for High Speed, Low Power, and Single 3.3 V Supply
|
Analog Devices
|
| SPP15N65C3 |
CoolMOSTM Power Transistor Features High peak current capability
|
Infineon Technologies AG
|
| MTE9460MC |
Peak Emission Wavelength: 950nm
High Power Infrared Emitter
|
Marktech Corporate
|
| RF3321PCBA RF3321 |
REVERSE PATH HIGH OUTPUT POWER PROGRAMMABLE GAIN AMPLIFIER
|
RFMD[RF Micro Devices]
|
